The magnetoelectric effect (ME) is an important strain mediated phenomenon in a ferromagnetic-piezoelectric composite for a variety of sensors and signal processing devices. A bias magnetic field, in general, is essential to realize a strong ME coupling in most composites. Magnetic phases with (i) high magnetostriction for strong piezomagnetic coupling and (ii) large anisotropy field that acts as a built-in bias field are preferred so that miniature, ME composite-based devices can operate without the need for an external magnetic field. We are able to realise such a magnetic phase with a composite of (i) barium hexaferrite (BaM) with high magnetocrystalline anisotropy field and (ii) nickel ferrite (NFO) with high magnetostriction. The BNx composites, with (1-x) wt.% of BaM and x wt.% NFO, for x = 0-100, were prepared. X-ray diffraction analysis shows that the composites did not contain any impurity phases. Scanning electron microscopy images revealed that with an increase in NFO content, hexagonal BaM grains become prominent, leading to a large anisotropy field. The NFO rich composites with x ≥60 show a large magnetostriction value of around -23 ppm, comparable to pure NFO. The anisotropy field HA of the composites, determined from ferromagnetic resonance (FMR) measurements, increased with increasing NFO content and reached a maximum of 12.39 kOe for x= 75. This large in-plane HA acted as a built-in field for strong ME effects under zero external bias in a bilayer with PZT. The BN composite was cut into rectangular platelets and bonded with PZT to form the bilayers. ME voltage coefficient (MEVC) measurements at low frequencies and at mechanical resonance showed strong coupling at zero bias for samples with x ≥33. The highest zero-bias MEVC of ~22 mV/cm Oe was obtained for BN75-PZT bilayers wherein BN75 also has the highest HA. Bilayer of BN41-PZT showed a amximum MEVC ~800 mV/cm Oe at electromechanical resonance at 68.4 kHz. The use of hexaferrite-spinel ferrite composite to achieve strong zero-bias ME coupling in bilayers with PZT is significant for applications related to energy harvesting, sensors, and high frequency devices.

This study investigates the electrical characteristics observed in n- channel and p-channel ferroelectric field effect transistor (FeFET) devices fabricated through a similar process flow with 10 nm of ferroelectric hafnium zirconium oxide (HZO) as the gate dielectric. The n-FeFETs demonstrate a faster complete polarization switching compared to the p-channel counterparts. Detailed and systematic investigations using TCAD simulations reveal the role of fixed charges and interface traps at the HZO-interfacial layer (HZO/IL) interface in modulating the subthreshold characteristics of the devices. A characteristic crossover point observed in the transfer characteristics of n-channel devices is attributed with the temporary switching between ferroelectric-based operation to charge-based operation, caused by the pinning effect due to the presence of different traps. This experimental study helps understand the role of charge trapping effects in switching characteristics of n- and p-channel ferroelectric FETs.

This study investigates the impact of narrow-band terahertz pulses on the ferroelectric order parameter in Ba0.8Sr0.2TiO3 films on various substrates. The 375 nm thick BST film on an MgO (001) substrate exhibits enhanced THz-induced second harmonic generation when excited by THz pulses with a central frequency of 1.6 THz, due to the resonant excitation of the soft phonon mode. Conversely, the BST film on a Si (001) substrate shows no enhancement, due to its polycrystalline state. The 800 nm thick BST film on an MgO (111) substrate demonstrates maximum of second harmonic generation signal when excited by THz pulses at 1.8 THz, that is also very close to it`s soft mode frequency (1.9 THz). Notably, the frequency spectrum of the BST/MgO (111) film reveals peaks at both the fundamental and doubled frequencies, highlighting the quadratic dependence of SHG intensity on the THz pulse's electric field strength.

BiFeO3/La0.7Sr0.3MnO3 (BFO/LSMO) epitaxial heterostructures were successfully synthesized by pulsed laser deposition on (001)-oriented SrTiO3 single crystal substrates with Au top electrodes. Stable bipolar resistive switching characteristics regulated by ferroelectric polarization reversal was observed in the Au/BFO/LSMO heterostructures. The conduction mechanism was revealed to follow the Schottky emission model, and the Schottky barriers in high resistance and low resistance states were estimated based on temperature-dependent current–voltage curves. Further, the observed memristive behavior was interpreted via the modulation effect on the depletion region width and the Schottky barrier height caused by ferroelectric polarization reversal, combining with the oxygen vacancies migration near the BFO/LSMO interface.

The main advantage of using the ferroelectric material as a component of complex heterostructure is the ability to tune various properties of the whole system by means of external electric field. In particular, the electric field may change the polarization direction within the ferroelectric material and consequently affect the structural properties, which in turn affects the electronic and magnetic properties of the neighboring material. Besides, the ferroelectrics proceed the electrostriction phenomenon, which is promising to be used to affect the magnetic states of interface state in the heterostructure with a magnetic component. The interfacial phenomena are of a great interest since they provide an extended functionality useful for electronic devices of a new generation. Following an idea of utilizing a ferroelectric in heterostructures component in the present work we consider 2DEG, Rashba effect, the effect of magnetoelectric coupling and magnetostriction in order to emphasize the advantages of such heterostructures as components of devices. For this purpose model systems of LaMnO3/BaTiO3, La2CuO4/BaTiO3, Bi/BaTiO3 and Bi/PbTiO3, Fe/BaTiO3 heterostructures are investigated by density functional theory calculations.

The light response and resistance switching behavior in BaTiO3 (BTO) films are studied for a symmetric Pt/BTO/Pt structure. The resistance of films as a function of time with and without ultraviolet light has been studied. Furthermore, resistance switching behavior was clearly observed based on the application of 365 nm wavelength ultraviolet light. Consequently, the polarities of resistance switching can be controlled by ultraviolet light when the energy is larger than the band excitation energy. It is proposed that the polarity of the resistance switching is dictated by the competition of the ferroelectricity and oxygen vacancy migration. This provides a new mechanism for modulating the state of ferroelectric resistive memory devices.

In-plane electro-optical switching (IPS) is a natural feature of a conventional planar aligned display cell based on deformed helix ferroelectric liquid crystal effect (DHFLC-effect) with sub-wavelength helix pitch if the tilt angle close to 40 degrees.

Environmentally friendly lead-free K1-xNaxNbO3 (KNN) ceramics possess electromechanical properties comparable to lead-based ferroelectric materials, but cannot meet the needs of device miniaturization, and the corresponding thin films lack of theoretical and experimental studies. To this end, we developed the nonlinear phenomenological theory for ferroelectric materials to study the effects of non-equiaxed misfit strain on the phase structure, electromechanical properties and electrical response of K0.5Na0.5NbO3 epitaxial films and constructed the in-plane misfit strain (u1-u2) phase diagrams. The results show that K0.5Na0.5NbO3 epitaxial film under non-equiaxed in-plane strain can exhibit abundant phase structures, including orthorhombic a1c, a2c and a1a2 phases, tetragonal a1, a2 and c phases, and monoclinic r12 phases. Moreover, in the vicinity of a2c-r12, a1c-c and a1a2-a2 phase boundaries, K0.5Na0.5NbO3 epitaxial films exhibit excellent dielectric constant ε11, while at a2c -r12 and a1c-c phase boundaries large piezoelectric coefficient d15 is observed. It was also found that high permittivity ε33 and piezoelectric coefficients d33 exist near the a2c - a2, r12- a1a2 and a1c-a1 phase boundaries due to the existence of polymorphic phase boundaries (PPB) in the KNN system, which makes it easy to polarize near the phase boundaries, and the polarizability changes suddenly, leading to electromechanical enhancement. In addition, the results show that the K0.5Na0.5NbO3 thin films possess a large electrocaloric response at the phase boundary at the r12-a1a2 and a1c-a1 phase boundaries. And the maximum adiabatic temperature change ∆T is about 3.62 K when the electric field change is 30 MV/m at room temperature, which is significantly enhanced compared with equiaxed strain. This study provides theoretical guidance for obtaining K1-xNaxNbO3 epitaxial thin films with excellent properties.

Hf1-xZrxO2 (HZO) thin films are versatile materials suitable for advanced ferroelectric semiconductor devices. Previous studies have shown that the ferroelectricity of HZO thin films, can be stabilized by doping them with group III elements at low concentrations. While doping with Y improves the ferroelectric properties, there has been limited research on Y-HZO thin films fabricated using atomic layer deposition (ALD). In this study, we investigated the effects of Y doping cycles on the ferroelectric and electrical properties of as-deposited Y-HZO thin films with vaying compositions fabricated through ALD. The Y-HZO thin films were stably crystallized without the need for post-thermal treatment and exhibited transition behavior depending on the Y-doping cycle and initial composition ratio of the HZO thin films. These Y-HZO thin films offer several advantages, including enhanced dielectric constant, leakage current density, and improved endurance. Moreover, the optimized Y-doping cycle induced a phase transformation that resulted in Y-HZO thin films with improved ferroelectric properties, exhibiting stable behavior without fatigue for up to 1010 cycles. These as-deposited Y-HZO thin films show promise for applications in semiconductor devices that require high ferroelectric properties, excellent electrical properties, and reliable performance with a low thermal budget.

The challenge of achieving ultrafast switching of electric polarization in ferroelectric materials remains unsolved, as there is no experimental evidence of such switching to date. In this study, we have developed an enhanced model that describes switching within a two-dimensional space of generalized coordinates. Our findings indicate that stable switching in barium titanate cannot be achieved through a single linearly polarized pulse. When the intensity of the linearly polarized pulse reaches a certain threshold, the sample experiences depolarization, but not stable switching. Our study also reveals that phonon friction plays a minor role in the switching dynamics and provides an estimate of the optimal parameters of the perturbing pulse with the lowest intensity that results in depolarization of an initially depolarized sample.

Recent experiments devoted to characterizing the behavior of sessile ferroelectric liquid droplets on ferroelectric solid substrates, showed the existence of a droplet electromechanical Rayleigh-like instability. The instability is induced by the bulk polarization of the ferroelectric fluid which couples to the polarization of the underlying substrate through its fringing field and solid-fluid interface coupling. With the aim of characterizing this phenomenon, namely the coupling between the polarizations of a fluid and a solid material, we studied the behavior of ferroelectric liquid droplets confined between two solid substrates, arranged in different configurations realized so to generate fringing fields with different profiles. Results show that the features of the droplets instability are indeed affected by the specific fringing field shape in a way dominated by the minimization of the electrostatic energy associated to the bulk polarization of the ferroelectric fluid.

In this work, we report the electric energy storage properties of (1-x)Bi0.5(Na0.8K0.2)0.5TiO3-xBi0.2Sr0.7TiO3 (BNKT-BST; x = 0.15-0.50) relaxor ferroelectric ceramics enhanced via a domain engineering method. A rhombohedral–tetragonal phase, the formation of highly dynamic PNRs, and a dense microstructure are confirmed from XRD, Raman vibrational spectra, and microscopic investigations. The relative dielectric permittivity (2664 at 1 kHz) and loss factor (0.058) were gradually improved with BST (x=0.45). The incorporation of BST into BNKT can disturb the long-range ferroelectric order, lowering the dielectric maximum temperature Tm and inducing the formation of highly dynamic polar nano-regions. In addition, the Tm shifts toward high temperature with frequency and a diffuse phase transition, indicating relaxor ferroelectric characteristics of BNKT-BST ceramics, which is confirmed by the modified Curie Weiss law (γ=1.83). The rhombohedral–tetragonal phase, fine grain size, and lowered Tm with relaxor properties synergistically contribute to a high recoverable energy density Wrec of 0.81 J/cm3 and a high energy efficiency η of 86.95% at 90 kV/cm for x = 0.45.

The beneficial effects of Lanthanide incorporation into 0.94Na0.5Bi0.5TiO3-0.06BaTiO3 (BNT-BT) matrix on its functional properties were investigated. The conventional solid-state method was used for synthesizing samples. The structural refinement revealed that all samples crystallized in R3c rhombohedral symmetry. Raman spectroscopy study was carried out using green laser excitation and revealed that no clear perceptible variation in frequency is observed. Dielectric measurements unveiled that the introduction of rare earth obstructed the depolarization temperature promoted in BNT-BT with decreasing the diffusive phase transition with increasing the lanthanide size. Only Dysprosium addition showed comparable diffusion constant and dielectric behavior as the unmodified composition. Further, the comparison of the obtained ferroelectric hysteresis and strain-electric field loops revealed that only Dy-phase exhibited interesting properties comparing parent composition. In addition, the incorporation of lanthanides Ln3+ into the BNT-BT matrix led to the development of luminescence characteristics in the visible and near infrared regions, depending on the excitation wavelengths. The simultaneous occurrence of photoluminescence and ferroelectric/piezoelectric properties opens up possibilities for BNT-BT-Ln to exhibit multifunctionality in a wide range of applications.Keywords: Sodium Bismuth Titanate; structural refinement; dielectric properties; ferroelectric properties; piezoelectric properties; Photoluminescence.

Porous ferroelectric lead zirconate-titanate (PZT) films are a promising material for various electronics applications. This study focuses on understanding how structure-directing agent (polyvinylpyrrolidone) can change structure and electrical properties of porous PZT films prepared by chemical solution deposition. The films with various porosity up to ~ 40 vol.% and pore connectivity changing from 3-0 to 3-3 were prepared and studied by capacitance-voltage, dielectric hysteresis, transient current, photocurrent, and local current techniques. We have found that the linear decrease in the material volume in a porous film is not the only factor governing film properties. The key role in changing electrical properties plays the creation of new internal grain boundaries. This research expands the understanding of physical phenomena in porous ferroelectric films and may enable the development of new materials and devices.

Piezoelectric properties are of significant importance to medical ultrasound, actuators, sensor, and countless other device applications. The mechanism of piezoelectric properties can be deeply understood from structure evolutions. In this paper, we report a diagram of structure evolutions of the Pb(Zn1/3Nb2/3)0.91Ti0.09O3 (PZN-9PT) single crystal with excellent piezoelectric properties among the orthorhombic, tetragonal, and cubic phases with temperature increasing from room temperature to 220 C. Through fitting the temperature dependence XRD curves with Gauss and Lorenz functions, we obtained the evolutions of the content ratio of three kinds of phases (orthorhombic, tetragonal and cubic) and the lattice parameters of the PZN-9PT system with the changes of temperature. The XRD fitting results together with Raman and dielectric spectrums show that the phase transitions of PZN-9PT are a typical continuous evolution process, very similar to the phase transition of paraffin from solid to liquid. Additionally, resonance and anti-resonance spectrum show excellent piezoelectric properties of the crystals, which probably originate from the nano twin domains, as demonstrated by the TEM images. Of particular attention is that the thickness electromechanical coupling factor kt is up to 72%.

In this paper, we investigate the structural, microstructural, dielectric, and energy storage properties of Nd and Mn co-doped Ba0.7Sr0.3TiO3 [(Ba0.7Sr0.3)1-xNdxTi1-yMnyO3 (BSNTM) ceramics (x = 0, 0.005, and y = 0, 0.0025, 0.005, and 0.01)] via a defect dipole engineering method. The complex defect dipoles (MnTi"-VO∙∙)∙ and (MnTi"-VO∙∙) between acceptor ions and oxygen vacancies capture electrons, enhancing the breakdown electric field and energy storage performances. XRD, Raman spectroscopy, and microscopic investigations of BSNTM ceramics revealed the formation of a tetragonal phase, increased oxygen vacancies, and reduced grain size with Mn dopant, respectively. The BSNTM ceramics with x=0.005 and y=0 exhibit a high dielectric constant of 2058 and a dielectric loss of 0.026 at 1 kHz. These values gradually decreased to 1876 and 0.019 for x=0.005 and y=0.01 due to the Mn2+ ions at Ti4+-site, which facilitates the formation of oxygen vacancies, and prevents the decrease of Ti4+. In addition, the defect dipoles act as a driving force for depolarization to tailor the domain formation energy and domain wall energy, which provides a high difference between the maximum polarization of Pmax and remnant polarization of Pr (ΔP=10.39 µC/cm2). Moreover, the complex defect dipoles with optimum oxygen vacancies in BSNTM ceramics can provide not only a high ΔP but also reduce grain size, which together improve the breakdown strength from 60.4 to 110.6 kV/cm, giving rise to a high energy storage density of 0.41 J/cm3 and high efficiency of 84.6% for x=0.005 and y=0.01. These findings demonstrate that defect dipoles engineering is an effective method to enhance the energy storage performance of dielectrics for capacitor applications.