The tailoring of the surface properties of cellulose nanocrystals (CNCs) to meet various requirements in environmental, food, and material areas has always been of great interest. In this study, the surface chemistry of CNCs was noncovalently modified by cetyltrimethylammonium bromide (CTAB), followed by characterizations and an application as a coating material for interfacial interaction investigation over various substrates. Due to the CTAB modification, the surface charge of the CNCs was neutralized, resulting in an increased size of each nanocrystal at the aqueous status and the aggregated microfibers when dried up. The CTAB modification not only decreased the crystallinity of the samples from 48.57% to 9.12% but also hydrophobized the CNCs and decreased their total surface energy. Finally, the adsorption behavior of the CNCs and CTAB-CNCs over nonionic, anionic, and cationic polymers was investigated by ellipsometry. Based on the thickness of the CNC and CTAB-CNC layers over 2-Hydroxyethyl cellulose (HEC), carboxymethyl cellulose (CMC), and polyethyleneimine (PEI), we proposed that the adsorption behavior was overall influenced by electrostatic interaction, hydrogen bonding, and van der Waals forces and the thickness of the adsorbed layers could be impacted by both the surface charge and the size of the crystals.

Plasma polymerized (PP) thin films deposited in a soft or intermediate plasma discharge from hexamethyldisiloxane (HMDSO) were developed as sensors for the detection of volatile organic compounds (VOCs) vapors. Energy dispersive X-ray spectroscopy (EDX) and X-ray reflectometry (XRR) were performed to determine the organosilicon films elemental composition and density. Spectroscopic ellipsometry measurements were carried out to determine the refractive index of the films. Quartz crystal microbalance (QCM) and ellipsometry coupled to vapor sorption were used to investigate the sorption mechanism of several VOCs vapors into the films as a function of the plasma deposition conditions. The density and the refractive index of the PP-HMDSO films increased with the plasma energy due to a different chemical composition and different proportion of free volumes in the material network. The PP-HMDSO films showed different affinities towards the VOCs vapors depending on the plasma discharge energy. The films elaborated in the lowest plasma energy revealed a good sensitivity towards the VOCs especially toluene (one of the BTEX vapors) compared to the other films deposited under higher plasma energy. In addition, the selectivity between toluene and other non-BTEX VOCs such as heptane and ethanol decreased to become zero while increasing the plasma energy.

Copper nitride (Cu3N), a metastable semiconductor material, but with reasonably-high-stability at room temperature, is drawing a great deal of attention as a very promising next-generation, earth-abundant, thin-film solar absorber. Its non-toxicity, on the other hand, makes it a very attractive eco-friendly semiconducting material. In the present work, Cu3N thin films were grown by employing radio-frequency magnetron sputtering, at room temperature, with 50-W RF-power, and partial nitrogen pressures of 8.0 and 1.0, onto glass substrates. Thus, the influence of argon on the optical properties of the Cu3N thin films was studied, with the goal of being able to achieve a low-cost, light absorber material, with appropriate properties in order to substitute the more conventional silicon, in photovoltaic cells. Variable-angle spectroscopic ellipsometry measurements have been conducted at three angles, 50∘, 60∘, and 70∘, respectively, in order to obtain the two ellipsometric parameters psi, ψ, and delta, Δ, respectively. For the constructed optical model, the bulk planar Cu3N layer is described by a one-dimensional graded-index model, combine with the mixture of a Tauc-Lorentz oscillator and up to four Gaussian oscillators, whereas a BEMA model with 50%-air-void is adopted in order to account for the existing surface-roughness layer. In addition, the optical properties such as the energy-band gap, and refractive index and absorption coefficient, were determined in order to assess the actual capability of this material as a light absorber for solar cells. The direct and indirect band gap energies were accurately calculated, and they were found to be in the ranges of 2.14-2.21 eV and very clse to 1.50 eV, respectively.

Various efforts have been made to detect minimum value of glucose in any medium like water or body buffer solutions with high-sensitivity, accurate, and low-cost sensors in order to enhance life style. Therefore, the present study was done to investigate reliability of two-dimensional plasmonic structure by circular dichroism (CD) and ellipsometry tools in different concentrations of glucose. Our results confirmed a dependency of the CD signal on glucose concentrations and also a very good sensitivity based on the phase difference between each polarization in ellipsometry parameters with the help of an achiral plasmonic structure.

The manuscript presents the optical properties of directly deposited films of gold nanoparticles (AuNPs) prepared by ultrasonic spray pyrolysis technology. Four samples were produced, with an AuNPs deposition time of 15 min, 30 min, 1h and 4h on the glass substrate. The morphological characterization of the deposited films showed that the size of the first deposited AuNPs is between 10 and 20 nm, while with a longer duration of the deposition process, larger clusters of AuNPs grow by coalescence and aggregation. The prepared layers were optically characterised with Ultraviolet–visible spectroscopy (UV-vis) and ellipsometry. The ellipsometric measurements showed an increasingly denser and thicker effective thickness of the AuNPs layers. The extinction spectra display a clear local surface plasmonic resonance (LSPR) signature (peak 520-540 nm), indicating the presence of isolated particles in all samples. For all AuNPs layers, the imaginary part of both ε// and ε⏊ is dominated by a central peak around 2.2 eV corresponding to the LSPR of isolated particles and a high-energy shoulder due to Au interband transitions. It is shown that, as the density of particles increases, the extinction cross section grows over the whole spectral range where measurements are taken. Thus response can be explained with an enhanced electromagnetic response among AuNPs, that can be connected to the increase of particle density but also by the formation of clusters and irregular structures.

Anion doping of tungsten trioxide by nitrogen is used to obtain electrochrome cathode material, the spectral transmittance of which can be controlled by the doping level. A series of samples was synthesized by reactive magnetron sputtering of a metal tungsten target in a mixture of argon, nitrogen and oxygen gases. Warm-colored tungsten oxynitride films were prepared at higher doping levels and characterized using scanning electron microscopy, X-ray diffraction and X-ray photoelectron spectroscopy techniques. Optical properties were measured making use of transmission spectrophotometry and spectroscopic ellipsometry. These extensive experimental studies revealed an increase in absorption towards shorter wavelengths with increasing the doping level. At the same time, it was found that with increasing the doping level, the fraction of non-stoichiometric oxygen also steadily increases to half the total oxygen content. The imperfection of the doped material can stimulate its intercalation with electrolyte ions, accelerating the coloring/bleaching process and increasing the dynamical range between the dark and clear states, thus improving the consumer qualities of electrochemical materials and devices.

We determined the optimal composition of reactive magnetron sputtered TiO2-SnO2 mixed layers for electrochromic purposes. We determined and mapped the composition and optical parameters by Spectroscopic Ellipsometry (SE). The Ti‐ and Sn‐ targets have been placed separately, and the Si-wafers on glass substrate (30 cm× 30 cm) were moved under the two separated targets (Ti and Sn) in Ar‐O2 plasma. Different (Effective Medium Approximation (EMA) and oscillator-type) op-tical models were used to obtain the composition maps and thickness of the sample layer. Scanning Electron Microscopy (SEM) with Energy-Dispersive X-ray Spectroscopy (EDS) has been used to check the SE results. The ’goodness’ of diverse optical models have been compared, according to the conditions of sample preparation. We show that in the case of molecular-level mixed layers 2‐Tauc‐Lorentz oscillator model is better than the Bruggeman Effective Medium Approximation (BEMA). The electrochromic properties of mixed metal oxides that deposited by reactive sputtering have been mapped, too.

Copper-nitride (Cu3N) semiconductor material is attracting much attention as a potential, next-generation thin-film solar-light absorber in solar cells. In this communication, polycrystalline Cu3N thin films were prepared using reactive-RF-magnetron-sputtering deposition, at room temperature, onto glass and silicon substrates. The very-broadband optical properties of the Cu3N thin film layers were studied by UV-MIR (0.2-40 μm) ellipsometry and optical transmission, to be able to achieve the goal of a low-cost absorber material to replace the conventional silicon. The reactive-RF-sputtered Cu3N films were also investigated by focused ion beam scanning electron microscopy, and both FTIR and Raman spectroscopies.

Copper-nitride (Cu3N) material is attracting much attention as a potential next-generation thin-film solar-light absorber. In this work, polycrystalline Cu3N thin films were prepared using reactive-RF-magnetron sputtering, at room temperature,onto glass and silicon substrates. The optical properties of the Cu3N thin layers were studied by spectroscopic ellipsometry and transmission, to achieve a low-cost absorber material to replace conventional silicon. The reactive-RF-sputtered Cu3N films were also investigated by FIB-SEM microscopy and FTIR spectroscopy.

Germanium (Ge) nanostrip is embedded in polymer and studied as a waveguide. Measurement reveals that this new type of semiconductor/polymer heterogeneous waveguide exhibits strong absorption for the TE mode from 1500 nm to 2004 nm, while the propagation loss for the TM mode declines from 20.56 dB/cm at 1500 nm to 4.89 dB/cm at 2004 nm. The transmission characteristics serves as an essential tool to verify the optical parameters (n-κ) of the thin strips, addressing to the ambiguity raised by spectroscopic ellipsometry regarding highly absorbing materials. Furthermore, the observed strong absorption for the TE mode at 2004 nm is well beyond the cut-off wavelength of the crystalline bulk Ge (~1850 nm at room temperature). This redshift is modeled to manifest the narrowing of the Tauc-fitted bandgap due to the grain order effect in the amorphous Ge layer. The accurate measurement of the nanometer-scale light-absorbing strips in a waveguide form is a crucial step toward the accurate design of integrated photonic devices that utilize such components.

By reactive DC magnetron sputtering from a pure Ta target onto silicon substrates, Ta(N) films were prepared with a different N₂ flow rate of 0, 12, 17, 25, 38, 58 sccm. The effects of N₂ flow rate on the electrical properties, crystal structure, elemental composition and optical properties of Ta(N) were studied. These properties were characterized by the four-probe method, X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and spectroscopic ellipsometry (SE). Results show that the deposition rate decreases with an increase of the N₂ flows. On the other hand, the resistivity increases, the crystal size decreases, and the crystal structure transitions from β-Ta to TaN(111), and finally becomes the N-rich phase Ta₃N₅ (130,040). Studying the optical properties, it is found that there are differences in the refractive index (n) and extinction coefficient (k) of Ta(N) with different thicknesses and different N₂ flow rates, and dependent on the crystal size and crystal phase structure.

Nanoporous films of Eu-doped organosilicate glass (OSG) have been synthesized using sol-gel technology and spin-coating, employing evaporation-induced self-assembly (EISA), on silicon wafers. The Eu doping is achieved by dissolution of Eu(NO3)3·6H2O in the precursor solution. The deposited films are characterized by using Fourier transform infrared (FTIR) spectroscopy, ellipsometric porosimetry (EP), X-ray photoelectron spectroscopy (XPS) and photoluminescence spectroscopy. It is observed that Eu doping makes the films more hydrophilic and reduces the pore size and open porosity. The reduction Eu3+ → Eu2+ occurs in the pores of OSG films, which is confirmed by depth profiling XPS. However, Eu3+ still presents on the film’s top surface. Presence of Eu3+ and Eu2+ gives characteristic luminescence emission in the range of 600‒630 nm (Eu3+) and 290‒400 nm (Eu2+). The Eu2+/Eu3+ concentrations ratio depends on CH3 groups concentration in the films. Moreover, concentration of Eu2+ ions in the pores can be reduced by exposure in inductively coupled (ICP) oxygen plasma. The observed shift of the luminescence spectra towards the UV region, in comparison to previously reported Eu-doped organosilicate films, can be attributed to the energy transfer occurring between the host material and Eu2+ ions.

Recent developments in mid-infrared (MIR) spectroscopic ellipsometry enabled by quantum cascade lasers (QCLs) resulted in a drastic improvement in signal-to-noise ratio compared to conventional thermal emitter based instrumentation. Thus, it was possible to reduce the acquisition time for high-resolution broadband ellipsometric spectra from multiple hours to less than 1 second. This opens up new possibilities for real-time in-situ ellipsometry in polymer processing. To highlight these evolving capabilities we demonstrate the benefits of a QCL based MIR ellipsometer by investigating single and multilayered polymer films. The molecular structure and reorientation of a 2.5m thin biaxially oriented polyethylene terephtalate film is monitored during a stretching process lasting 24.5 s to illustrate the perspective of ellipsometric measurements in dynamic processes. In addition, a polyethylene/ethylene vinyl alcohol/polyethylene multilayer film is investigated at continuously varying angle of incidence ( 0∘ – 50∘) in 17.2 s, highlighting an unprecedented sample throughput for the technique of varying angle spectroscopic ellipsometry in the MIR spectral range. The obtained results underline the superior spectral and temporal resolution of QCL ellipsometry and qualify this technique as suitable method for advanced in-situ monitoring in polymer processing.