The attributes of electroplating as a low-cost, simple, scalable and manufacturable semiconductor deposition technique for the fabrication of large-area and nanotechnology-based device applications are discussed. These strengths of electrodeposition are buttressed experimentally using techniques such as X-ray diffraction, Ultraviolet-visible spectroscopy, Scanning electron microscopy, Atomic force microscopy, Energy-dispersive X-ray spectroscopy and photoelectrochemical cell studies. Based on the structural, morphological, compositional optical, and electronic properties evaluated results, it is evident that electroplating possesses the capabilities of producing high-quality semiconductors usable in producing excellent devices. In this paper, we will describe the progress of electroplating technique mainly for the deposition of semiconductor thin film materials, their treatment processes and fabrication of solar cells.

Electrodeposition of cadmium telluride (CdTe) on fluorine doped tin oxide (FTO) using two electrode configuration was successfully achieved with the main focus on the growth temperature. The electroplating temperatures explored ranges between (55 and 85)℃ for aqueous electrolytes containing 1.5 M cadmium nitrate tetrahydrate (Cd(NO3)2 •4H2O) and 0.002 M tellurium oxide (TeO2). The ensuing CdTe thin-films were characterised using X-ray diffraction (XRD), UV-Vis spectrophotometry, scanning electron microscopy (SEM), energy dispersive X-ray (EDX) and photoelectrochemical (PEC) cell measurements. The electroplated CdTe thin-films exhibit a dominant (111) CdTe cubic structure, while the crystallite size increases with the increase in the electroplating temperature. The internal strain, dislocation density and the number of crystallites per unit area decrease with increasing growth temperature. The optical characterization depicts that the CdTe samples show comparable absorbance and a resulting bandgap of 1.51±0.03 eV for as-deposited CdTe layers. A marginal increase in the bandgap and reduction in the absorption edge slope towards lower deposition temperatures were also revealed. The annealed CdTe thin-films showed improvement in energy bandgap as it tends towards 1.45 eV while retaining the aforementioned absorption edge slope trend. Scanning electron microscopy shows that the underlying FTO layers are well covered with increasing grain size observable relative to the increase in the deposition temperature. The energy dispersive X-ray analyses show an alteration in the Te/Cd relative to the deposition temperature. Higher Te ratio with respect to Cd was revealed at deposition temperature lower than 85℃. The photoelectrochemical cell study shows that both p- and n-type CdTe can be electroplated and that deposition temperatures below 85℃ at 1400 mV results in p-type CdTe layers.

X-ray fluorescence is largely employed in the measurement of the thickness of coatings. Despite of its diffusion, the task is not straightforward because of the complex physics involved that results in high dependence on matrix effects. Thickness quantification is in practice accomplished using the Fundamental Parameters approach, adjusted with empirical measurements of standards with known composition and thickness. This approach has two major drawbacks: i) there are no standards for any possible coating and coating architecture and ii) even relying on standards, the quantification of unknown samples requires the precise knowledge of the matrix nature (e.g., in case of multilayer coatings the thickness and the composition of each underlayer). In this work, we describe a semiquantitative approach to coatings thickness measurement based on the construction of calibration curves through simulated XRF spectra built with Monte Carlo simulations. Simulations have been performed with the freeware software XMI-MSIM. We have assessed the accuracy of the methods by comparing the results with those obtained by i) XRF thickness determination with standards and ii) FIB-SEM cross-sectioning. Then we evaluated which parameters are critical in this kind of indirect thickness measurements.