The dimensional effect of the accumulation of an electric charge with a density of up to 270 μF/g by the system of compacted zirconium dioxide nanoparticles during exposure in an electric field (5000 V/m) under normal physical conditions is determined. Based on a qualitative complex analysis of the forms of appearance of the effect, it is shown that the place of localization of different charge carriers is the surface of nanoparticles. The supposed mechanism of this effect is considered using the theory of dispersed systems, the band theory, and the theory of contact phenomena in semiconductors. It was concluded that this mechanism is due to the phenomenon of localization of electron-type charge nanoparticles in the near-surface zone of the material in contact with the adsorption ion atmosphere. This effect is relevant for modern nanoelectronics, microsystem technology, and printed electronics.

Cobalt oxide nanoparticles are promising candidates for various kinds of practical application. The interest of researchers and scientists in these nanoparticles is due to their unique physical and chemical properties such as density, melting point, magnetic characteristics and band gap. The need to develop high performance and low-cost technologies for obtaining Co3O4 nanoparticles is a major reason in research in this area. The widespread commercial use of Co3O4 nanoparticles will open doors for numerous novel cost effective technologies, which are mostly dependent on the type of synthesis method and raw materials. A possible solution to this problem is to use Cobalt nitrates as a cost-effective precursor using the solution combustion method. Solution combustion synthesis method is one of the best candidate methods that have the potential for high performance and is also cost-effective. This review examines recent progress in the synthesis of Co3O4 nanoparticles by solution combustion method and underscores their significance across various fields, highlighting the need for further research and exploration of their multifaceted applications. In addition, the most recent advancements in the applications of Co3O4 nanoparticles in sensitive sensing, catalysis, supercapacitors/batteries and water treatment/pollutants removal are reviewed and described, focusing on current trends, challenges, and future outlooks.

In this work, we report the electric energy storage properties of (1-x)Bi0.5(Na0.8K0.2)0.5TiO3-xBi0.2Sr0.7TiO3 (BNKT-BST; x = 0.15-0.50) relaxor ferroelectric ceramics enhanced via a domain engineering method. A rhombohedral–tetragonal phase, the formation of highly dynamic PNRs, and a dense microstructure are confirmed from XRD, Raman vibrational spectra, and microscopic investigations. The relative dielectric permittivity (2664 at 1 kHz) and loss factor (0.058) were gradually improved with BST (x=0.45). The incorporation of BST into BNKT can disturb the long-range ferroelectric order, lowering the dielectric maximum temperature Tm and inducing the formation of highly dynamic polar nano-regions. In addition, the Tm shifts toward high temperature with frequency and a diffuse phase transition, indicating relaxor ferroelectric characteristics of BNKT-BST ceramics, which is confirmed by the modified Curie Weiss law (γ=1.83). The rhombohedral–tetragonal phase, fine grain size, and lowered Tm with relaxor properties synergistically contribute to a high recoverable energy density Wrec of 0.81 J/cm3 and a high energy efficiency η of 86.95% at 90 kV/cm for x = 0.45.

Crystalline silicon nanomembrane (Si NM) is promising in wearable and implantable bioelectronics due to its electrical and mechanical performances. However, the current explorations are not enough to firmly bridge ultrathin encapsulation strategies with high performance crystalline Si NM based transistors. In this work, we utilized Al2O3/alucone as the ultrathin encapsulation strategies aim to thoroughly investigate the effect of gate dielectric surface area on the electrical performance of crystalline Si NM based metal-oxide-semiconductor capacitors (MOSCAPs). The comparative analysis was implemented on the three types of diameters (Ø) MOSCAPs with and without Al2O3/alucone encapsulation under planar and concave/convex bending conditions. Benefited from the Al2O3/alucone ultrathin encapsulations, the stability of gate leakage current density, and interfacial characteristics were maintained and improved under mechanical bending deformations for MOSCAPs with predefined Ø of 160, 240, and 320 μm compared to the bare MOSCAPs. Combined with the Ø-related mechanical analysis on the maximum strain in the critical layers and the practical measurements, the encapsulated MOSCAPs with Ø 160 μm showed the most stable electro-mechanical performances. The variations for encapsulated MOSCAPs with three types of Ø emerged in the oxide layer and the interface at dielectric/Si NM that were carefully evaluated according to the bending deformations. These findings are significant for leveraging the practical applications in the ultrathin encapsulation strategies for reliable operations of crystalline Si NM based integrated circuits (ICs).

The concepts of fractional calculus and the related techniques have been gaining momentum in circuit system fields, and an increasing body of evidence suggests that fractional-order characteristics are widely distributed in electronic components. In this paper, we consider the fractional characteristics of non-solid aluminum electrolytic capacitors and focus on the nonlinear dynamic characteristics of peak-current-mode controlled (PCMC) dc-dc boost converters with such components. In the work, we establish a piecewise smooth non-commensurate fractional-order model to describe the converter, in which the fractional-order equivalent impedance model of capacitors is adopted and the detailed control loop is considered. In order to analyze the converter, we use the fractional Adams-Bashforth-Moulton typed method (F-ABM) and stroboscopic map technique to obtain the time-domain solutions and the bifurcation diagram. The results of bifurcation diagrams indicate that, with the change of different parameters, the converter enters chaotic state through period doubling bifurcation. In order to provide empirical evidence for the nonlinear dynamic analysis, we consider both circuit-level simulation and experiments in the work, the results of which further confirm the results of theoretical analysis.

Switched-mode power supplies (SMPS) often utilize electrolytic capacitors due to their substantial energy density and economical pricing. However, their ability to function at low temperatures is essential for dependable operation in several sectors, including telecommunications, automotive, and aerospace. This study includes an experimental evaluation of how well standard SMPS electrolytic capacitors operate at low temperatures. This paper investigates the suitability of standard electrolytic capacitors used in switched-mode power supplies (SMPS) for low-temperature applications. The experimental evaluation exposed the capacitors to temperatures ranging from - 5 ∘C to - 40 ∘C, assessing capacitance (Cp), impedance (Z), dissipation factor (DF), and equivalent series resistance (ESR) at each temperature. The capacitor’s time-domain electrical signals were analyzed using the Pearson correlation coefficient to extract discriminative features. These features were input into an Artificial Neural Network (ANN) for training and testing. Results indicated a significant impact of low temperatures on capacitor performance. Capacitance decreased with lower temperatures, while ESR and leakage current increased, affecting stability and efficiency. Impedance proved to be a valuable diagnostic tool for identifying potential capacitor failure, showing a 98.44% accuracy drop at - 5 degrees and 88.75% at the peak temperature, indicating proximity to the manufacturer’s specified limit. The study suggests further research and development to improve electrolytic capacitors’ performance in SMPS systems under cold conditions to enhance efficiency and reliability.

In this study, multi-layer ceramic capacitors (MLCCs) detached from lighting sector's waste electrical-electronic equipment (WEEE) are characterised for the presence of rare earth elements (REEs) and precious metals (PMs). Their digestion was carried out with HNO3 & aqua regia on a heating plate and characterised with the use of inductively coupled plasma optical emission spectroscopy (ICP-OES) & scanning electron microscopy with energy dispersive X-ray spectroscopy (SEM-EDX). The contents of REEs and PMs are 0.84 wt% and 0.60 wt%, respectively, and create an economic stored value in MLCCs that is essentially defined by PMs of 98.67% and by Pd 78.37%. The content of the main elements is: Nd 0.366 wt%, Y 0.220 wt%, Dy 0.131 wt%, Ag 0.467 wt%, and Pd 0.105 wt%. The results confirm the need of selective removal and separate recycling process of MLCCs from WEEE drivers.

In this paper, we investigate the structural, microstructural, dielectric, and energy storage properties of Nd and Mn co-doped Ba0.7Sr0.3TiO3 [(Ba0.7Sr0.3)1-xNdxTi1-yMnyO3 (BSNTM) ceramics (x = 0, 0.005, and y = 0, 0.0025, 0.005, and 0.01)] via a defect dipole engineering method. The complex defect dipoles (MnTi"-VO∙∙)∙ and (MnTi"-VO∙∙) between acceptor ions and oxygen vacancies capture electrons, enhancing the breakdown electric field and energy storage performances. XRD, Raman spectroscopy, and microscopic investigations of BSNTM ceramics revealed the formation of a tetragonal phase, increased oxygen vacancies, and reduced grain size with Mn dopant, respectively. The BSNTM ceramics with x=0.005 and y=0 exhibit a high dielectric constant of 2058 and a dielectric loss of 0.026 at 1 kHz. These values gradually decreased to 1876 and 0.019 for x=0.005 and y=0.01 due to the Mn2+ ions at Ti4+-site, which facilitates the formation of oxygen vacancies, and prevents the decrease of Ti4+. In addition, the defect dipoles act as a driving force for depolarization to tailor the domain formation energy and domain wall energy, which provides a high difference between the maximum polarization of Pmax and remnant polarization of Pr (ΔP=10.39 µC/cm2). Moreover, the complex defect dipoles with optimum oxygen vacancies in BSNTM ceramics can provide not only a high ΔP but also reduce grain size, which together improve the breakdown strength from 60.4 to 110.6 kV/cm, giving rise to a high energy storage density of 0.41 J/cm3 and high efficiency of 84.6% for x=0.005 and y=0.01. These findings demonstrate that defect dipoles engineering is an effective method to enhance the energy storage performance of dielectrics for capacitor applications.

We offered the circuit of a discrete analog filter (DAF) low frequencies of second-order on switchable capacitors, which differs from the known ones in that three capacitors with one terminal are connected to a common bus, and the frequency of the DAF pole depends not only on the ratio of the capacitances of the frequency-setting capacitors, but also on the ratio of resistances two additional resistors in the feedback. This allows at constant values ​​of the capacitances and a fixed switching frequency of electronic switches, control the pole frequency by changing the resistance ratio of additional resistors. Computer simulation of the developed circuit was performed in the Micro-Cap environment. It has been established that the DAF has a transmission coefficient close to minus one at very low frequencies and a transmission coefficient close to zero at higher frequencies.