CdZnTe (CZT) is a new type of compound semiconductor that has emerged in recent years. Compared to other semiconductor materials, it possesses an ideal bandgap, high density, and high electron mobility, rendering it an excellent room-temperature composite semiconductor material for X-ray and γ-ray detectors. Due to the exceptional performance of CZT material, detectors manufactured using it exhibit high energy resolution, spatial resolution, and detection efficiency. They also have the advantage of operating at room temperature. CZT array detectors, furthermore, demonstrate outstanding spatial detection and three-dimensional imaging capabilities. Researchers worldwide have conducted extensive studies on this subject. This paper, building upon this foundation, provides a comprehensive analysis of CZT crystals and CZT array detectors, summarizes existing research to offer valuable insights for envisioning new detector methodologies.

The general circuit topology and principles of low-noise high-voltage power supply are investigated to meet the requirements of the high-voltage bias application in air kerma meters. Two topologies, flyback converter and Royer converter are simulated using SPICE simulation program. The simulation results indicate that the circuit structure of the Royer converter is more complex, but it obtains lower output high voltage noise. While we develop an adjustable high-voltage power supply according to the circuit structure of the Royer converter, and tested it to ensure the design requirements for continuously adjustable output high-voltage linearity. The test results show that the linear adjustment rate is not more than ±0.0025%, the load regulation rate is less than ±0.1%, and the output ripple noise voltage percentage is less than 0.01%. These tested performance make it more suitable for accurate nuclear measurements.