ARTICLE | doi:10.20944/preprints202108.0201.v1
Subject: Business, Economics And Management, Finance Keywords: green credit policy; heavily polluted industries; green innovation efficiency; financing cost; R&D investment
Online: 9 August 2021 (15:02:50 CEST)
Green credit policy as an important tool to guide China's sustainable economic development, how to effectively play the function of capital deployment and improve the efficiency of industrial green innovation is an important issue facing the construction of ecological civilization. This paper uses China's Green Credit Guideline introduced in 2012 as a quasi-natural experiment , based on relevant panel data of industries from 2007 to 2018, uses the Super-SBM model including non-expected output to measure the green innovation efficiency of 35 industries in China, and constructs the PSM-DID model to explore how green credit policy impact on the green innovation efficiency of heavily polluted industries, the results show that : green credit policy significantly contributes to green innovation efficiency of heavily polluted industries with a lag. Further study finds that green credit policy pushes heavily polluted industries to improve green innovation efficiency by increasing financing cost and R&D investment; meanwhile, the heterogeneity test shows that the higher the state-owned share of industry, the greater the promoted effect of green credit policy on green innovation efficiency of heavily polluted industries. Finally, in order to accelerate the implementation of green credit policy and promote the green innovation efficiency of heavily polluted industries, relevant countermeasures are proposed from three aspects: banks, enterprises and government.
ARTICLE | doi:10.20944/preprints202304.0430.v1
Subject: Engineering, Electrical And Electronic Engineering Keywords: IGBT; gate oxide layer degradation; feature fusion; performance prediction; CNN-LSTM network
Online: 17 April 2023 (09:13:59 CEST)
The problem of health status prediction of insulated-gate bipolar transistors (IGBTs) gains a lot of attention in the field of health management of power electronic equipment. The performance degradation of IGBT gate oxide layer is one of the important failure modes. In view of failure mechanism analysis and easy implementation of monitoring circuit, this paper selects the gate leakage current of IGBT as the precursor parameter of gate oxide degradation, and uses time domain characteristic analysis, gray correlation degree, Mahalanobis distance, Kalman filter and other methods to carry out feature selection and fusion, and finally obtains a health indicator characterizing the degradation of IGBT gate oxide. Based on the Convolutional Neural Network and Long Short-Term Memory (CNN-LSTM) network, this paper constructs an IGBT gate oxide degradation prediction model, and performs experimental analysis on the dataset released by NASA-Ames Laboratory, and the average absolute error of performance degradation prediction is as low as 0.0216. Compared with Long Short-Term Memory (LSTM), Convolutional Neural Network (CNN), Support Vector Regression (SVR) and CNN-LSTM models, CNN-LSTM network has the highest prediction accuracy. These results show the feasibility of gate leakage current as a precursor parameter of IGBT gate oxide layer failure, as well as the accuracy and reliability of the CNN-LSTM prediction model.