In this paper, the synthesis of two novel luminescent Eu3+ ion complexes [Eu(TFT)3(phen) (1) and Eu(TFT)3(bpy)•Hex (2)] based on the combination of 2-(2,2,2-trifluoroethyl)-1-tetralone (TFT), containing n-donor ligands (1,10-phenanthroline or 2,2'-Bipyridine) and Eu3+ ion is reported herein, and their structural features are discussed on the basis of X-ray crystallographic and thermal analyses. We observed that the ligands transfer energy effectively to the metal center by fluorescence, IR and UV spectrograms studies. The structures and properties of complexes 1-2 were optimized by the DFT theoretical calculation, and the calculation results were consistent with the experimental X-ray structure data and spectral analysis.

We report the effects of surface passivation by depositing a hydrogenated amorphous silicon (a-Si:H) layer on the electrical characteristics of low temperature polycrystalline silicon thin film transistors (LTPS TFTs). The a-Si:H layer was optimized by hydrogen dilution and its structural and electrical characteristics were investigated. The a-Si:H layer in the transition region between a-Si:H and µc-Si:H resulted in superior device characteristics. Using an a-Si:H passivation layer, the field-effect mobility of the LTPS TFT was increased by 78.4% compared with a conventional LTPS TFT. Moreover, the leakage current measured at a V_GS of 5 V was suppressed because the defect sites at the poly-Si grain boundaries were well passivated. Our passivation layer, which allows thorough control of the crystallinity and passivation-quality, should be considered a candidate for high performance LTPS TFTs.

Light sources tend to affect images captured in any automatic optical inspection (AOI) system. In this study, the effectiveness of metal-halide lamps, quartz-halogen lamps, and LEDs as the light sources in AOI systems for the detection of the 3rd and 4th layers electrodes of thin-film-transistor liquid crystal displays (TFT-LCDs) is examined experimentally. The results show that the performance of LEDs is generally comparable or better than that of metal-halide and quartz-halogen lamps. The best optical performance is by the blue LED due to its spectrum compatibility with the time-delay-integration charged-coupled device (TDI CCD) sensor and its better spatial resolution. The images revealed by the blue LED are sharper and more distinctive. Since current LEDs are more energy efficient and environmentally friendly, using LEDs as the light source for AOI is very beneficial. As the blue LED performs the best, it should be adopted for AOI using TDI CCD sensors.

This work reports the role of structure and composition on the determination of the performances of p-type SnOx TFTs deposited by rf magnetron sputtering at room temperature, followed by a post-annealed step up to 200 °C at different oxygen partial pressures (Opp), between 0% and 20%, but where the p-type conduction was only observed between 2.8–3.8%. The role of structure and composition were evaluated by XRD and Mössbauer spectroscopic studies. The study allows to identify the best phases/compositions and thicknesses (around 12 nm) to be used that lead to the production of TFTs with a bottom gate configuration, on glasses coated with conductive Indium Tin Oxide, followed by Aluminium Titanium Oxide dielectric layer with saturation mobility of 4.6 cm²V⁻¹s⁻¹ and on-off ratio above 7 × 10⁴, operating at the enhancement mode with a saturation voltage of −10 V.

An ultraviolet (UV) nanosecond pulsed laser with a wavelength of 355 nm was applied to anneal amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFT) at various laser beam powers ranging from 0 to 280 mW. Laser irradiation was selectively carried out on the a-IGZO channel area using the beam scanning method after the a-IGZO TFT was formed through indium-tin oxide (ITO) electrode patterning and a subsequent lift-off process. After laser annealing, negative shifts in the threshold voltages and enhanced on-currents were observed at laser-beam powers ranging from 54 to 120 mW. No meaningful parameters were investigated for laser beams higher than 200 mW. By extracting the energy band gap and work function of a-IGZO from the transmittance and ultraviolet photoelectron spectroscopy (UPS) results, the ITO electrode/a-IGZO channel energy band structures were established under different laser annealing conditions, and the electron injection mechanism from the ITO to the a-IGZO channel was analyzed and optimized at a laser beam power of 120 mW. The results show that the electrical characteristics of the a-IGZO TFTs can be improved without any heat damage to the substrate because of the selective annealing process.

We propose a deep learning algorithm that directly compensates for luminance degradation owing to the deterioration of organic light emitting diode (OLED) devices to address the burn-in phenomenon of OLED displays. Conventional compensation circuits are encumbered by a high cost of development and manufacturing processes owing to their complexity. However, given that deep learning algorithms are typically mounted on a system on chip (SoC), the complexity of the circuit design is reduced, and the circuit can be reused by re-learning only the changed characteristics of the new pixel device. The proposed approach comprises deep feature generation and multi-stream self-attention, which decipher the importance of the variables, and the correlation between burn-in-related variables. It also utilizes a deep neural network that identifies the nonlinear relationship between the extracted features and luminance degradation. Thereafter, the luminance degradation is estimated from the burn-in-related variables, and the burn-in phenomenon can be addressed by compensating for the luminance degradation. The experimental results revealed that compensation was successfully achieved within an error range of 4.56%, and demonstrate the potential of a new approach that can mitigate the burn-in phenomenon by directly compensating for pixel-level luminance deviation.

The nitrogen-doped amorphous oxide semiconductor (AOS) thin film transistors (TFTs) with double-stacked channel layers (DSCL) were prepared and characterized. The DSCL structure composed of nitrogen-doped amorphous InGaZnO and InZnO films (a-IGZO:N/a-IZO:N or a-IZO:N/a-IGZO:N) made the corresponding TFT devices exhibit quite large field-effect mobility due to the existence of double conduction channels. Especially, the a-IZO:N/a-IGZO:N TFTs showed even better electrical performance (μ_FE = 15.0 cm²·V^-1·s^-1, SS = 0.5 V/dec, V_TH = 1.5 V, I_ON/I_OFF = 1.1×10⁸) and stability (V_TH shift of 1.5, -0.5, and -2.5 V for positive bias-stress, negative bias-stress and thermal stress tests, respectively) than the a-IGZO:N/a-IZO:N TFTs. Based on the X-ray photoemission spectroscopy measurements and energy band analysis, it was assumed that the optimized interface trap states, the less ambient gas adsorption, and the better suppression of oxygen vacancies in the a-IZO:N/a-IGZO:N hetero-structures might be responsible for the better behaviors of the corresponding TFTs.