ARTICLE
|
doi:10.20944/preprints201707.0084.v1
Subject:
Engineering,
Electrical And Electronic Engineering
Keywords:
CMOS inverter; NMOS transistor; PMOS transistor; voltage transfer characteristic (VTC), threshold voltage; voltage critical value; noise margins; NMOS transconductance parameter; PMOS transconductance parameter
Online: 28 July 2017 (12:44:55 CEST)