Inorganic and organic – inorganic (hybrid) perovskite semiconductor materials have attracted the worldwide scientific attention and research effort as the new wonder material in optoelectronics. Their excellent physical and electronic properties have been exploited to boost the solar cells efficiency beyond 23% and captivate their potential as competitors to the dominant silicon solar cells technology. However, the fundamental principles in Physics dictate that an excellent material for photovoltaic applications must be also an excellent light emitter. This has been realized for the case of perovskite based light emitting diodes (LEDs) but much less for the case of the respective laser devices. Here, the strides have been made since 2014 are presented for the first time. The solution processability, low temperature crystallization, formation of nearly defect free, nanostructures, the long range ambipolar transport, the direct energy band gap, the high spectral emission tunability over the entire visible spectrum and the almost 100% external luminescence efficiency show perovskite semiconductors’ potential to transform the nanophotonics sector. The operational principles, the various adopted material and laser configurations along the future challenges are reviewed and presented in this paper.

Hydroiodic acid (HI) treated - reduced graphene oxide (rGO) ink/conductive polymeric composites are considered as promising cold cathodes in terms of high geometrical aspect ratio and low field emission (FE) threshold devices. In this study, four simple, cost-effective, solution-processed approaches for rGO-based field effect emitters were developed, optimized and compared; rGO layers were coated on a) n+ doped Si substrate, b) n⁺-Si/P3HT:rGO, c) n⁺-Si/PCDTBT:rGO and d) n⁺-Si/PCDTBT:PC₇₁BM:rGO composites, respectively. The fabricated emitters were optimized by tailoring the concentration ratios of their preparation and field emission characteristics. In a critical composite ratio, FE performance was remarkably improved compared to the pristine Si, as well as n⁺-Si/rGO field emitter. In this context, the impact of various materials, such as polymers, fullerene derivatives, as well as different solvents on rGO function reinforcement and consequently on FE performance upon rGO-based composites preparation was investigated. The field emitter consisted of n⁺-Si/PCDTBT:PC₇₁BM(80%):rGO(20%)/rGO displayed a field enhancement factor of ∼2850, with remarkable stability over 20h and low turn-on field in 0.6V/μm. High-efficiency graphene-based FE devices realization paves the way towards low-cost, large-scale electron sources development. Finally, the contribution of this hierarchical, composite film morphology was evaluated and discussed.