In recent years graphene has attracted much interest due to its unique properties of flexibility, strong light-matter interaction, high carrier mobility and broadband absorption. In addition, graphene can be deposited on many substrates including silicon with which is able to form Schottky junctions opening the path to the realization of near-infrared silicon photodetectors based on the internal photoemission effect where graphene play the role of the metal. In this work, we review the very recent progress of the near-infrared photodetectors based on Schottky junctions involving graphene. This new family of device promises to overcome the limitations of the Schottky photodetectors based on metals showing the potentialities to compare favorably with germanium photodetectors currently employed in silicon photonics.

In this work we theoretically investigate the responsivity/noise equivalent power (NEP) trade-off in graphene/semiconductor Schottky photodetectors (PDs) operating in the near-infrared regime and working at room temperature. Our analysis shows as the responsivity/NEP ratio is strongly dependent on the Schottky barrier height (SBH) of the junction and we derive a closed analytical formula for maximizing it. In addition, we theoretically discuss as the SBH is linked to the bias applied to the junction in order to show how these devices could be optimized in practice for different semiconductors. We discover that graphene/n-silicon (Si) Schottky PDs could be optimized at 1550nm showing a responsivity and NEP of 133mA/W and 500fW/Hz, respectively, by a low reverse bias of only 0.66V. Moreover, we show that graphene/n-germanium (Ge) Schottky PDs optimized in term of responsivity/NEP ratio could be employed at 2000nm with a responsivity and NEP of 233mA/W and 31pW/Hz, respectively. We believe that our insights are of great importance in the field of silicon photonics for the realization of Si-based PDs to be employed in power monitoring, lab-on-chip and environment monitoring applications.

This paper presents the design, fabrication and characterization of Schottky erbium/silicon photodetectors working at 1.55 µm. These erbium/silicon junctions are carefully characterized using both electric and optical measurements at room temperature. A Schottky barrier ΦB of ~673 meV is extrapolated; the photodetectors show external responsivity of 0.55 mA/W at room temperature under a 8 V of reverse bias applied. In addition, the device performance is discussed in terms of normalized noise and noise equivalent power. To the best of our knowledge, these are the first Er/Si photodetectors designed for operation in free space at 1.55 µm. The proposed devices will pave the way towards development of Er-based photodetectors and light sources to be monolithically integrated in the same silicon substrate and both operating at 1.55 µm.

Multilayer absorbers based on Cr2O3 and Cr, designed to improve the Solar-to-thermal conversion efficiency at mid temperatures in high vacuum flat thermal panel, are fabricated via sputtering deposition on bulk copper substrates and characterized by thermal and optical analysis. The refractive index of the single layers has been measured and used to estimate absorber thermal efficiency at the operating temperatures. Multilayers have been produced via sputtering deposition on bulk copper substrates. The absorber multilayers can be 10% more efficient than the commercial alternative at 250 °C operating temperatures, reaching 380 °C stagnation temperature without Sun concentration. The thermal stability has been checked at temperature of 400 °C in vacuum for four hours. High vacuum flat thermal collectors, equipped with the produced selective solar absorbers can obtain unprecedented performances and can give important contribution to the energy transition from fossil fuels to renewable energy for efficient heat production.