This paper presents the design, fabrication and characterization of Schottky erbium/silicon photodetectors working at 1.55 µm. These erbium/silicon junctions are carefully characterized using both electric and optical measurements at room temperature. A Schottky barrier ΦB of ~673 meV is extrapolated; the photodetectors show external responsivity of 0.55 mA/W at room temperature under a 8 V of reverse bias applied. In addition, the device performance is discussed in terms of normalized noise and noise equivalent power. To the best of our knowledge, these are the first Er/Si photodetectors designed for operation in free space at 1.55 µm. The proposed devices will pave the way towards development of Er-based photodetectors and light sources to be monolithically integrated in the same silicon substrate and both operating at 1.55 µm.

Multilayer absorbers based on Cr2O3 and Cr, designed to improve the Solar-to-thermal conversion efficiency at mid temperatures in high vacuum flat thermal panel, are fabricated via sputtering deposition on bulk copper substrates and characterized by thermal and optical analysis. The refractive index of the single layers has been measured and used to estimate absorber thermal efficiency at the operating temperatures. Multilayers have been produced via sputtering deposition on bulk copper substrates. The absorber multilayers can be 10% more efficient than the commercial alternative at 250 °C operating temperatures, reaching 380 °C stagnation temperature without Sun concentration. The thermal stability has been checked at temperature of 400 °C in vacuum for four hours. High vacuum flat thermal collectors, equipped with the produced selective solar absorbers can obtain unprecedented performances and can give important contribution to the energy transition from fossil fuels to renewable energy for efficient heat production.

The fabrication of thin-film multilayer structures by sputtering technique usually requires multi-cathode deposition machine. This study proposes a simpler approach based on the RF power modulation: silicon nitride (SiN$_x$) thin films were prepared by RF reactive sputtering in (Ar + N$_2$) atmosphere at room temperature. The samples were analyzed to highlight the effects of different deposition conditions on the morphological and optical properties of the films in the visible and near/mid-IR regions. The refractive index of the films was changed in the range of 1.5 - 2.5 (at $\lambda$=800 nm) by tuning the sputtering power. IR reflectance measurements revealed the absence of spurious (oxygen- or hydrogen-based) phases, while atomic force and scanning electron microscopies confirmed the presence of flat and defect-free samples surfaces.