In this paper, we present the investigation results of radiation-induced effects in metal-oxide-semiconductor (MOS) doped with moderate amounts of Zinc Oxide (ZnO) as a potential candidate for space-borne application. The samples were fabricated via the sputtering method at a working pressure of 3mTorr and a deposition temperature of 300oC. The ZnO samples were exposed to 1.25-MeV gamma-ray utilizing Co60 source, and their electronic response was measured at ionizing doses ranging from 10 kGy to 300 kGy. A comparative work was performed through finite element method to simulate the electronic response of the PN junction diode due to ionizing radiation. The results indicate that the ideality factor of the MOS diode increases as the ionizing dose increases, rendering it unsuitable for use as a diode. The degradation of the electrical parameters was also simulated, showing the increase in hole concentration. These findings suggest that the ejection of electrons occurred, which agrees with the gamma radiation effects trend. Furthermore, as the intensity of radiation increases, the spatial charge that arises from the separation of hole-electron pairs results in a substantial reduction of the electric field in the central portion of the n-type region. These findings provide insights into the degradation of electrical parameters in MOS devices under gamma radiation and have implications for their use in space-borne applications.

Monolayered MoS₂ is energetically most stable when it has a 1H phase, but 1H to 1T phase transition (1H→1T) is easily realized by various ways. Even though magnetic moment is not observed during 1H1T, 0.049 µB/MoS₂ is obtained in local 1T phase; 75% 2H and 25% 1T phases are mixed in (2×2) supercell. Furthermore, non-negligible magnetocrystalline anisotropy (MCA) energy is occured. Most magnetic moment as well as MCA are originated by 1T phased Mo atom5 in the supercell, while electronic structures of other atoms are similar to non-magnetic. Due to this, magnetic/non-magnetic boundary is created in the monolayered MoS2. Our result suggests that MoS₂ can be applied for spintronics such as a spin transistor.

ZnO thin films with a thickness of 300 nm were deposited on Si and Al2O3 substrates using electron beam evaporation technique with the aim to be tested as low cost and low power consumption gas sensors for ozone (O3). To characterize the surface roughness and the grain size, which are the main parameters recognized to enhance gas sensitivity since they directly influence the effective sensing area, surface morphology and roughness analyses of the films were performed using scanning electron microscopy and atomic force microscopy, respectively. The crystalline structure and elemental composition were studied through Raman spectroscopy and X-ray photoelectron spectroscopy. Gas tests were conducted at room temperature and zero-bias voltage to assess the sensitivity and response as a function of time of the films to O3 pollutant. The results indicate that the films deposited on Al2O3 exhibit promising characteristics, such as high sensitivity and a very short response time (< 2 s) to the gas concentration. Additionally, it was observed that the films display pronounced degradation effects after a significant exposure to O3.

A novel low-power MOS-only voltage reference is presented. The Enz-Krummenacher-Vittoz (EKV) model is adopted to provide a new perspective on the operating principle. The normalized charge density, introduced as a new variable, serves as an indicator when trimming the output temperature coefficient. The proposed voltage reference consists of a specific current generator and a 5-bit trimmable load. Thanks to the well-match between the current source stage and the output stage, the non-linear temperature dependence of carrier mobility is automatically canceled out. The circuit is designed in 55 nm COMS technology. The operating temperature ranges from -40 ∘C to 120 ∘C. The average temperature coefficient of the output voltage can be reduced to 21.7 ppm/∘C by trimming. The power consumption is only 23.2 nW with a supply voltage of 0.8 V. The line sensitivity and the power supply rejection ratio at 100 Hz are 0.011 %/V and -89 dB respectively.

During carbonation process, the presence of water is an important parameter to accelerate this phenomenon. The carbon dioxide (CO₂) has been used as curing process production of fiber cement boards keeping the dimensional stability of cellulose fibers in cementitious matrix and promoting the CO₂ capture of environment. In addition, magnesium oxysulfate (MOS) cement has been used as another alternative binder to reduce the amount of CO₂ in the nature. The aim of this scientific paper is analysis the effect of rehydration method on the physical-mechanical properties of CO2-cured magnesium-based fiber cement boards. These boards were produced by Hatschek process simulation. The physical-mechanical performance and microstructural characteristics of MOS boards before and after carbonation were investigated by: water absorption (WA), apparent porosity (AP), and bulk density (BD); four-point bending test; X-ray diffraction (XRD); thermogravimetric analysis (TGA) and scanning electron microscopy (SEM). According to the results, it was possible observe which the accelerated carbonation process resulted in improvements in the mechanical properties of the boards. The boards carbonated after 48 hours showed higher Modulus of Rupture values. The rehydration process of the composites before carbonation led to enhancements in the boards pre-cured for 48 and 72 hours, demonstrating that carbonation occurred more effectively after the supply of water through rehydration. The improvements in mechanical properties were associated with the formation of hydration products, which preferentially formed in the pores and voids of the fiber-cement. The presence of these carbonation products altered the physical properties of the materials, increasing the density of the boards and reducing the void volume. The decomposition of the formed carbonates was confirmed by thermogravimetric analysis, which indicated that the rehydration process favored the carbonation of the materials

The gate resistance is a parasitic element in transistors for RF and millimeter-wave circuits that can negatively impact power gain and noise figure. To develop accurate device models, a reliable measurement methodology is crucial. This article reviews the standard measurement methodology used in the literature and proposes also an additional method, which is evaluated using suitable test structures in a 16nm FinFET process. The advantages and disadvantages of the two approaches are discussed along with their respective application scenarios

Quality of Service (QoS) metrics deal with network quantities, e.g. latency and loss, whereas Quality of Experience (QoE) provides a proxy metric for end-user experience. Many papers in the literature have proposed mappings between various QoS metrics and QoE. This paper goes further in providing analysis for QoE versus bandwidth cost. We measure QoE using the widely accepted Mean Opinion Score (MOS) rating. Our results naturally show that increasing bandwidth increases MOS. However, we extend this understanding by providing analysis for internet access scenarios, using TCP, and varying the number of TCP sources multiplexed together. For these target scenarios our analysis indicates what MOS increase you get by further expenditure on bandwidth. We anticipate that this will be of considerable value to commercial organizations responsible for bandwidth purchase and allocation.