The purpose of this study is to propose a consecutive manufacturing process system to secure the productivity of excellent STKN540B steel tube in the respect of economy and safety as the supporting material for mega structures such as building, bridge and ship. The components of consecutive manufacturing are press-bending, orbital auto welding and steel tube correction. By using STKN540B a high-strength steel material with low yield point that requires a special manufacturing process unlike other steel materials, an actual tube manufacturing is carried out at each stage in this experimental study. With this, the quality of steel tube and the efficiency of the manufacturing process are analyzed to draw out some points to improve in the future.

We report the electrical properties of Al0.3Ga0.7N/GaN heterojunction field effect transistor (HFET) structures with a Ga2O3 passivation layer grown by metal-organic chemical vapor deposition (MOCVD). In this study, three different thicknesses of Ga2O3 dielectric layers were grown on Al0.3Ga0.7N/GaN structures leading to metal-oxide-semiconductor-HFET or MOSHFET structures. X-ray diffraction (XRD) showed the (¯201) orientation peaks of -Ga2O3 in the device structure. The van der Pauw and Hall measurements yield the electron density of ~ 4 x1018 cm-3 and mobility of ~770 cm2V-1s-1 in the 2-dimensional electron gas (2DEG) channel at room temperature. Capacitance-voltage (C-V) measurement for the on-state 2DEG density for the MOSHFET structure was found to be of the order of ~1.5 x1013 cm-2. The thickness of the Ga2O3 layer was inversely related to the threshold voltage and the on-state capacitance. The interface charge density between the oxide and Al0.3Ga0.7N barrier layer was found to be of the order of ~1012 cm2eV-1. The annealing at 900° C of the MOSHFET structures revealed that the Ga2O3 layer was thermally stable at high temperatures resulting in insignificant threshold voltage shifts for annealed samples with respect to as-deposited (unannealed) structures. Our results show that the MOCVD-gown Ga2O3 dielectric layers can be a strong candidate for stable high-power devices.