Displacement mapping is a computer graphics technique that enables the design of components with regularly or randomly textured surfaces that can be quickly materialized on a three-dimensional (3D) printer when needed. This approach is in principle more flexible, faster and more economical compared to conventional texturing methods, but the accuracy of the texture depends heavily on the parameters used. The purpose of this study is to demonstrate how to produce a surface-textured part using polygonal (mesh) modeling software and a photopolymerizable resin, and to develop a universal methodology to predict the dimensional accuracy of the model file log combined with a resin 3D printer. The printed components were characterized on a scanning confocal microscope. In the setup used in this study, the mesh size had to be reduced to 10% of the smallest feature size and the textured layer had to be heavily (x4) overexposed to achieve the desired accuracy. As a practical application, two functional stamps with a regular (honeycomb) and a random texture, respectively, were successfully manufactured. The insights gained will be of great benefit in quickly and cost-effectively producing components with innovative patterns and textures for a variety of hobby, industrial and biomedical applications.

The detection of dopamine in a highly sensitive and selective manner is crucial for the early diagnosis of a number of neurological diseases/disorders. Here, a report on a new platform for the electrochemical detection of dopamine with a considerable accuracy that comprises a 3D porous graphene oxide (pGO)/gold nanoparticle (GNP)/pGO composite-modified indium tin oxide (ITO) is presented. The pGO was first synthesized and purified by ultrasonication and centrifugation, and it was then further functionalized on the surface of a GNP-immobilized ITO electrode. Remarkably, owing to the synergistic effects of the pGO and GNPs, the 3D pGO-GNP-pGO-modified ITO electrode showed a superior dopamine-detection performance compared with the other pGO- or GNP-modified ITO electrodes. The linear range of the newly developed sensing platform is from 0.1 μM to 30 μM with a limit of detection (LOD) of 1.28 μM, which is more precise than the other previously reported GO-functionalized electrodes. Moreover, the 3D pGO-GNP-pGO-modified ITO electrodes maintained their detection capability even in the presence of several interfering molecules (e.g., ascorbic acid, glucose). The proposed platform of the 3D pGO-GNP-pGO-modified ITO electrode could therefore serve as a competent candidate for the development of a dopamine-sensing platform that is potentially applicable for the early diagnosis of various neurological diseases/disorders.

An ultraviolet (UV) nanosecond pulsed laser with a wavelength of 355 nm was applied to anneal amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFT) at various laser beam powers ranging from 0 to 280 mW. Laser irradiation was selectively carried out on the a-IGZO channel area using the beam scanning method after the a-IGZO TFT was formed through indium-tin oxide (ITO) electrode patterning and a subsequent lift-off process. After laser annealing, negative shifts in the threshold voltages and enhanced on-currents were observed at laser-beam powers ranging from 54 to 120 mW. No meaningful parameters were investigated for laser beams higher than 200 mW. By extracting the energy band gap and work function of a-IGZO from the transmittance and ultraviolet photoelectron spectroscopy (UPS) results, the ITO electrode/a-IGZO channel energy band structures were established under different laser annealing conditions, and the electron injection mechanism from the ITO to the a-IGZO channel was analyzed and optimized at a laser beam power of 120 mW. The results show that the electrical characteristics of the a-IGZO TFTs can be improved without any heat damage to the substrate because of the selective annealing process.