β-Ga2O3 is a well-known semiconductor material for power devices and other applications. Recently, β-Ga2O3 has also been reported as a scintillator material with a light yield of approximately 8400 ph./MeV, scintillation decay time of <1 μs, and density of 6.44 g/cm3. In this study, 2-inch diameter β-Ga2O3 single crystals were prepared by oxide crystal growth using the cold crucible (OCCC) method under various oxygen partial pressures. In the OCCC method, as in the cold crucible method, a high frequency is applied directly to the oxide materials, which are heated and melted, and the melt is held by the outermost solid material itself that is cooled by water using a copper hearth. In the OCCC method, crystal growth is performed while rotating the seed crystal, as in the Czochralski method, to increase the crystal diameter. The optical properties and radiation responses of the crystals grown under various oxygen partial pressures were evaluated.

The ordered Ca3TaGa3Si2O14 and disordered La3Ga5SiO14 crystals of the lantangallium silicate family were grown by the Czochralski method. The independent coefficients of thermal expansion of crystals αc and αa were determined by X-ray powder diffraction based on the analysis of X-ray diffraction spectra measured in the temperature range of 25÷1000°C. It is shown that in the temperature range of 25÷800°C the thermal expansion coefficients are linear. At temperatures above 800°C there is a nonlinear character of the thermal expansion coefficients associated with a decrease in the Ga content in the crystal lattice of the lantangallium silicate family crystals.

: The silicon single crystals for semiconductor application is usually grown by Czochralski (CZ) method. This paper researches 300mm silicon Czochralski (CZ) crystal growth with CUSP magnetic field for IGBTs substrate application. The different positions of Zero-Gauss plane (ZGP) under CUSP magnetic field are simulated and compared to numerical analysis, investigated melt convection, melt flow velocity near to quartz crucible wall, diffusion boundary layer and effect of initial oxygen concentration in the silicon crystal, and the shape of solid/liquid interface was discussed. The results show that the change of the ZGP of the CMF mainly affects the convection in the melt, which leads to the difference of the thickness of the boundary layer near to the wall of the quartz crucible, and was found to be the key to reduce the oxygen dissolution from the crucible wall and oxygen diffuse into the crystal, along with the differences in the shape of the crystal-melt interface. In addition, we have carried out actual industrial single crystal production under the three configurations. The results show that the experimental data of oxygen content and shape of the crystal-melt interfaces in silicon crystal are consistent with the numerical results.