Copper indium gallium selenide (CIGS) is an inexpensive material that has the potential to dominate the next-generation photovoltaic (PV) industry. Here we detail computational investigation of CIGS solar cell with encouragement of adopting cuprous dioxide (Cu₂O) as a Hole Transport Layer (HTL) for efficient fabricated CIGS solar cells. Although Cu₂O as a HTL has been studied earlier for perovskite and other organic/inorganic solar cell yet no study has been detailed on potential application of Cu₂O for CIGS solar cells. With the proposed architecture, recombination losses are fairly reduced at the back contact and contribute to enhanced photo-current generation. With the introduction of Cu₂O, the overall cell efficiency is increased to 26.63%. The wide-band of Cu₂O pulls holes from the CIGS absorber which allows smoother extraction of holes with experiencing lesser resistance. Further, it was also inferred that, HTL also improves the quantum efficiency (QE) for photons with large wavelengths thus increases the cell operating spectrum.

Copper indium gallium diselenide, Cu(In,Ga)Se2, thin-film of about 1.2 μm has been deposited on Mo coated soda lime glass by thermal co-evaporation of Cu, In, Ga, and Se sources. The thin film CIGS was characterized by energy dispersive spectroscopy (EDS) and identified the elemental composition of Cu, In, Ga and Se in the film. A CIGS device was completed by the successive deposition of multiple layers; SLG/Mo/CIGS/CdS/ZnO/ITO which yielded the efficiency of 11%. External spectroscopic ellipsometry (ex-situ SE) was performed on the completed device and the device analysis was performed. Starting with the parameterized complex dielectric functions of the individual component layers, SE analysis was performed using a step-wise procedure that ranks the fitting parameters according to their ability to reduce the mean square error (MSE) of the fit. The resulting layer thicknesses and dielectric functions were used to simulate the external quantum efficiency (EQE) of the device assuming complete active layer collection. Electronic losses were identified by comparison of simulated EQE with the measured EQE. The ultimate goal of this work is the optimization of narrow band-gap CIGS-related solar cells for the bottom layer in tandem devices.

The characterization of thin-film solar cells is of huge importance for obtaining high open-circuit voltage and low recombination rates from the interfaces or within the bulk of the main materials. Among the many electrical characterization techniques, the two- and four-wire probe using the Cascade instrument is of interest since the resistance of the wires, and the electrical contacts can be excluded by the additional two wires in 4-wire probe configuration. In this paper, both two and four-point probes configuration are employed to characterize the CIGS chalcogenide thin-film solar cells. The two-wire probe has been used to measure the current-voltage characteristics of the cell which results in a huge internal resistance. Therefore, the four-wire connection is also used to eliminate the lead resistance to enhance the characterization’s accuracy. The load resistance in the two-wire probe diminishes the photogenerated current density at smaller voltage ranges. In contrast, the proposed four-wire probe collects more current at higher voltages due to enhanced carrier collection efficiency from contact electrodes. The current conduction mechanism is also identified at every voltage region represented by the value of the ideality factor of that voltage region. It is observed that a long time given to the charge collection results in increased current density at a higher voltage. According to the results and device characteristics, a novel double-diode model is suggested to extract the saturation current density, shunt and series resistances and the ideality factor of the cells. These cells are shown to be efficient in terms of low recombination at the interfaces and with lower series resistance as the quality of the materials is in its most possible conductive form. The measured internal resistance and saturation current density and ideality factor of the two measurement configuration is measured and compared.

Multi-junction solar cells comprised of stacked III-V semiconductor junctions represent the highest-efficiency photovoltaic technology, with recent demonstrations exceeding 47% efficiency . Optimizing the design and thickness of each junction is critical for maximizing performance . This work utilizes Silvaco TCAD tools to systematically optimize a 5-junction cell based on AlInP, AlGaInP, AlGaInAs, GaInP, GaAs, InGaAs, and Ge similar to recent record cells . The junction thicknesses are varied using a predictive profiler to sample the parameter space . For each combination, the spectral absorption and I-V characteristics are simulated to determine the efficiency . Statistical analysis identifies the optimal thickness set that maximizes performance to 26% under 1 sun illumination .