We offered the circuit of a discrete analog filter (DAF) low frequencies of second-order on switchable capacitors, which differs from the known ones in that three capacitors with one terminal are connected to a common bus, and the frequency of the DAF pole depends not only on the ratio of the capacitances of the frequency-setting capacitors, but also on the ratio of resistances two additional resistors in the feedback. This allows at constant values ​​of the capacitances and a fixed switching frequency of electronic switches, control the pole frequency by changing the resistance ratio of additional resistors. Computer simulation of the developed circuit was performed in the Micro-Cap environment. It has been established that the DAF has a transmission coefficient close to minus one at very low frequencies and a transmission coefficient close to zero at higher frequencies.

A new low-pass filter (LPF) circuit with independent adjustment of various, incl. digitally controlled, pole frequency resistors, pole quality factor and transmission coefficient. The proposed low-pass filter is based on the use of the properties of a multi-differential operational amplifier that performs the functions of a signal adder. The peculiarity of the filter is that it has three inputs, with respect to which different transmission coefficients are implemented, incl. inverting (-1) and non-inverting (+1). To check these properties of a low-pass filter in the Micro-Cap environment, computer simulation of a specific circuit was performed on a multi-differential operational amplifier AD 8130. Mathematical expressions are given for the main parameters of the proposed low-pass filter, which allow parametric synthesis of elements of a specific circuit under given restrictions on the used element base.

The zero offset voltage in anti-aliasing low-pass filters (LPF) included at the ADC input has a significant effect on the effective bit rate of the ADC. The article discusses methods for minimizing the systematic component of the zero offset voltage (V_OS) of operational amplifiers (Op-Amp) in the structure of the LPF, due to the degradation of the current gain of the base (b) of bipolar transistors for an extremely common subclass of Op-Amp with one high-impedance node. The methods of matching a high-impedance Op-Amp node and a buffer amplifier with the help of special correcting SCM^p and SCMⁿ multipolars are proposed. Methods of description and formation of the given coefficients of weak current asymmetry of typical Op-Amp functional units (current mirrors, input DS, buffer amplifiers, SRC, etc.) are presented. As an example, the results of computer simulation of GaAs Op-Amp with small V_OS performed on JFET field and p-n-p bipolar transistors are given.

The circuitry of the summarized "floating" differential stages (FDS) based on complementary field-effect transistors with a control p-n junction (CJFET), intended for use in low-noise analog microcircuits, for example, operational amplifiers. The results of modeling the flow characteristics of one of the CJFET FDSs in the LTSpice XVII environment at low temperatures (down to -197 ⁰С) and exposure to a neutron flux in the range of 1e13 ÷ 1e15 n / cm² are presented.

The most popular schemes of digital potentiometers (DP) and digital-to-analog converters (DAC) are considered. DP and DAC use how elements of parameter adjustment of active RC-filters. The circuits of the DAC on the Kelvin-Varley divider, the Kelvin divider based on the R-2R matrix, and the architecture of the DAC with a segmented circuit are shown. The internal structure of DP an Analog Devices and Intersil company is shown, and also the DP switching circuits in a tunable low-pass filter and a band-pass filter, a programmable inverting amplifier and a voltage regulator are presented.

In this paper consider the circuitry of voltage followers (VF) with unity-gain, intended for practical use in active Sallen-Key RC-filters (LPF, HPF, BPF, RF). The results of research and computer modeling of radiation-resistant and low-temperature VF in the LTSpice environment on models of CJFET transistors operating under the influence of neutron flux up to 10e14 n/cm2 and cryogenic temperatures up to -197°C are presented.