Preserved in Portico This version is not peer-reviewed
Improving Absorption in Single Silicon Nanowires by Symmetry-breaking Design from Square to Rectangular Cross-section
: Received: 27 November 2020 / Approved: 27 November 2020 / Online: 27 November 2020 (20:22:58 CET)
: Received: 8 February 2021 / Approved: 8 February 2021 / Online: 8 February 2021 (11:38:12 CET)
A peer-reviewed article of this Preprint also exists.
Journal reference: Journal of Nanoelectronics and Optoelectronics 2021, 16, 428-433
Light absorption in single nanowires (NWs) is one of the most crucial factors for photovoltaic applications. In this paper, we carried out a detailed investigation of light absorption in single rectangular NWs (RNWs). We show that the RNWs exhibit improved light absorption compared with the square NWs (SNWs), which can be attributed to the symmetry-breaking structure that can increase the light path length by increasing the vertical side and the enhanced leaky mode resonances (LMRs) by decreasing the horizontal side. We found that the light absorption in silicon RNWs can be enhanced by engineering the horizontal and vertical sides, the photocurrent is significantly increased by 276.5% or 82.9% compared with that of the SNWs with the same side length as the horizontal side of 100 nm or the vertical side of 1000 nm, respectively. This work provides an effective way for designing high-efficiency single NW photovoltaic devices based on the symmetry breaking from the SNWs to RNWs.
single nanowires; Symmetry breaking; rectangular cross-section; absorption
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