Working Paper Article Version 1 This version is not peer-reviewed

Design and Modelling of a Novel Integrated Photonic Device for Nano-Scale Magnetic Memory Reading

Version 1 : Received: 30 October 2020 / Approved: 2 November 2020 / Online: 2 November 2020 (10:18:36 CET)

A peer-reviewed article of this Preprint also exists.

Demirer, F.E.; van den Bomen, C.; Lavrijsen, R.; van der Tol, J.J.G.M.; Koopmans, B. Design and Modelling of a Novel Integrated Photonic Device for Nano-Scale Magnetic Memory Reading. Appl. Sci. 2020, 10, 8267. Demirer, F.E.; van den Bomen, C.; Lavrijsen, R.; van der Tol, J.J.G.M.; Koopmans, B. Design and Modelling of a Novel Integrated Photonic Device for Nano-Scale Magnetic Memory Reading. Appl. Sci. 2020, 10, 8267.

Journal reference: Appl. Sci. 2020, 10, 8267
DOI: 10.3390/app10228267

Abstract

Design and simulations of an integrated photonic device that can optically detect the magnetization direction of its ultra-thin ( 12 nm) metal cladding, thus ‘read’ the stored magnetic memory, are presented. The device is an unbalanced Mach Zehnder Interferometer (MZI), which consists of a ferromagnetic thin-film cladding and a delay line in one branch, and a polarization converter in the other, is based on InP Membrane on Silicon (IMOS) platform. It quantitatively measures the non-reciprocal phase shift caused by the Magneto-Optic Kerr Effect in the guided mode which depends on the memory bit’s magnetization direction. The current design is an analytical tool for research exploration of all-optical magnetic memory reading. It has been shown that the device is able to read a nanoscale memory bit (400x50x12 nm) by using a Kerr rotation as small as 0.2∘, in the presence of a noise ∼10 dB in terms of signal-to-noise ratio. The device is shown to tolerate performance reductions that can arise during the fabrication.

Subject Areas

integrated photonics; InP; magneto-optic; MZI; mode conversion; PMA; multi-layered thin film; magnetic memory; MOKE; Fourier transformation

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