Working Paper Article Version 1 This version is not peer-reviewed

A Novel High-Performance Bipolar GaN Diode Realized by Broadened Quantum Well and Three-Dimensional Carrier Sea

Version 1 : Received: 5 August 2020 / Approved: 7 August 2020 / Online: 7 August 2020 (07:42:26 CEST)

How to cite: Wang, Z.; Chen, C.; Wang, S.; Li, L.; Yao, Y. A Novel High-Performance Bipolar GaN Diode Realized by Broadened Quantum Well and Three-Dimensional Carrier Sea. Preprints 2020, 2020080175 Wang, Z.; Chen, C.; Wang, S.; Li, L.; Yao, Y. A Novel High-Performance Bipolar GaN Diode Realized by Broadened Quantum Well and Three-Dimensional Carrier Sea. Preprints 2020, 2020080175

Abstract

In this paper, we firstly report a GaN-based bipolar diode with a p-n junction generated by Three-Dimensional Electron Sea and Three-Dimensional Hole Sea which are induced by elaborately designing the graded AlGaN layer. According to the experiment-calibrated simulation, the proposed device features a high forward current of 2.83 A/mm and a maximum breakdown voltage (BV) of 112 V in a very small chip area. Moreover, this diode has a fast reverse extraction process and reverse recovery time of 2ns. Considering the selective etching technique and selective area regrowth technique are mature for GaN-based materials, although this design needs more trade-off and optimization to balance the on-state current and BV, the strong capability in current transportation and a high performance in dynamic recovery enable a notablely promising prospects in various power applications.

Subject Areas

GaN; Bipolar; Diode; Three-Dimensional Carrier Sea

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