Preprint Article Version 1 This version is not peer-reviewed

Modeling Dislocation Contrasts Obtained by Accurate-Electron Channeling Contrast Imaging for Characterizing Deformation Mechanisms in Bulk Materials

Version 1 : Received: 26 April 2019 / Approved: 28 April 2019 / Online: 28 April 2019 (10:54:03 CEST)
Version 2 : Received: 10 May 2019 / Approved: 14 May 2019 / Online: 14 May 2019 (06:14:38 CEST)

A peer-reviewed article of this Preprint also exists.

KRIAA, H.; GUITTON, A.; MALOUFI, N. Modeling Dislocation Contrasts Obtained by Accurate-Electron Channeling Contrast Imaging for Characterizing Deformation Mechanisms in Bulk Materials. Materials 2019, 12, 1587. KRIAA, H.; GUITTON, A.; MALOUFI, N. Modeling Dislocation Contrasts Obtained by Accurate-Electron Channeling Contrast Imaging for Characterizing Deformation Mechanisms in Bulk Materials. Materials 2019, 12, 1587.

Journal reference: Materials 2019, 12, 1587
DOI: 10.3390/ma12101587

Abstract

Electron Channeling Contrast Imaging (ECCI) is becoming a powerful tool in Materials Science such as for characterizing deformation defects. Dislocations observed by ECCI in Scanning Electron Microscope, exhibit several features depending on the crystal orientation relative to the incident beam (white/black line on a dark/bright background). In order to bring new insights concerning these contrasts, we report an original theoretical approach based on the dynamical diffraction theory. Our calculations led, for the first time, to an explicit formulation of the backscattered intensity as function of various physical and practical parameters governing the experiment. Intensity profiles are modeled for dislocations parallel to the sample surface for different channeling conditions. All theoretical predictions are consistent with experimental results.

Subject Areas

ECCI; dislocation contrast; modeled intensity profiles; invisibility criteria; dynamical theory of electron diffraction

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