Preprint Article Version 1 This version is not peer-reviewed

Low Concentration Response Hydrogen Sensors Based on Wheatstone Bridge

Version 1 : Received: 22 February 2019 / Approved: 25 February 2019 / Online: 25 February 2019 (14:34:58 CET)

A peer-reviewed article of this Preprint also exists.

Jiang, H.; Tian, X.; Deng, X.; Zhao, X.; Zhang, L.; Zhang, W.; Zhang, J.; Huang, Y. Low Concentration Response Hydrogen Sensors Based on Wheatstone Bridge. Sensors 2019, 19, 1096. Jiang, H.; Tian, X.; Deng, X.; Zhao, X.; Zhang, L.; Zhang, W.; Zhang, J.; Huang, Y. Low Concentration Response Hydrogen Sensors Based on Wheatstone Bridge. Sensors 2019, 19, 1096.

Journal reference: Sensors 2019, 19, 1096
DOI: 10.3390/s19051096

Abstract

MEMThe PdNi film hydrogen sensors with Wheatstone bridge structure were designed and fabricated by the micro-electro-mechanical system (MEMS) technology. The integrated sensors consisted of four PdNi alloy film resistors. The interval two of them were shielded with silicon nitride film and used as reference resistance, while the others were used for hydrogen sensing. The PdNi alloy films and SiN films were deposited by magnetron sputtering. The morphology and microstructure of the PdNi films were characterized with X-ray diffraction (XRD). The output resistance signal was converted to millivolt output voltage signal for easy data acquisition. Hydrogen (H2) sensing properties of PdNi film hydrogen sensor with Wheatstone bridge structure was investigated under different temperatures (30℃, 50℃ and 70℃) and H2 concentrations (from 10 ppm to 0.4%). The hydrogen sensor demonstrated good response at different hydrogen concentrations and high repeatability in cycle testing under 0.4% H2 concentration. Under 10ppm hydrogen, the PdNi film hydrogen sensor had evident and collectable output voltage of 600 μV.

Subject Areas

hydrogen sensors; PdNi thin films; Wheatstone bridge; low concentration

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