Preprint Article Version 1 This version is not peer-reviewed

Improvement of Electrical Performance in P-Channel LTPS Thin-Film Transistor with a-Si:H Surface Passivation

Version 1 : Received: 1 November 2018 / Approved: 2 November 2018 / Online: 2 November 2018 (09:32:53 CET)

A peer-reviewed article of this Preprint also exists.

Jang, K.; Kim, Y.; Phong, P.D.; Lee, Y.; Park, J.; Yi, J. Improvement of Electrical Performance in P-Channel LTPS Thin-Film Transistor with a-Si:H Surface Passivation. Materials 2019, 12, 161. Jang, K.; Kim, Y.; Phong, P.D.; Lee, Y.; Park, J.; Yi, J. Improvement of Electrical Performance in P-Channel LTPS Thin-Film Transistor with a-Si:H Surface Passivation. Materials 2019, 12, 161.

Journal reference: Materials 2019, 12, 161
DOI: 10.3390/ma12010161

Abstract

We report the effects of surface passivation by depositing a hydrogenated amorphous silicon (a-Si:H) layer on the electrical characteristics of low temperature polycrystalline silicon thin film transistors (LTPS TFTs). The a-Si:H layer was optimized by hydrogen dilution and its structural and electrical characteristics were investigated. The a-Si:H layer in the transition region between a-Si:H and µc-Si:H resulted in superior device characteristics. Using an a-Si:H passivation layer, the field-effect mobility of the LTPS TFT was increased by 78.4% compared with a conventional LTPS TFT. Moreover, the leakage current measured at a VGS of 5 V was suppressed because the defect sites at the poly-Si grain boundaries were well passivated. Our passivation layer, which allows thorough control of the crystallinity and passivation-quality, should be considered a candidate for high performance LTPS TFTs.

Subject Areas

poly-Si TFT; FT-IR; Raman; surface passivation; leakage current

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