Preprint Concept Paper Version 1 This version is not peer-reviewed

Explore the Parametric Variations on Different Doping Profiles of MOSFET for Analog and Digital Applications

Version 1 : Received: 2 October 2018 / Approved: 3 October 2018 / Online: 3 October 2018 (13:00:20 CEST)

How to cite: Ullah, M.S.; Fouad, E.; Domi, X..M. Explore the Parametric Variations on Different Doping Profiles of MOSFET for Analog and Digital Applications. Preprints 2018, 2018100048 (doi: 10.20944/preprints201810.0048.v1). Ullah, M.S.; Fouad, E.; Domi, X..M. Explore the Parametric Variations on Different Doping Profiles of MOSFET for Analog and Digital Applications. Preprints 2018, 2018100048 (doi: 10.20944/preprints201810.0048.v1).

Abstract

The VLSI industry is facing parasitic effects that trouble development in the nanoscale domain. However, instead of replacing the traditional MOSFET design, it would be more advantageous to apply different doping profiles and discerning which deal with specific parasitic effects the best. With a review of Gaussian doping, Uniform doping, and Delta doping profiles and analysis of the FET technology characteristics that use these doping profiles, a comparison can be made among them for integrated circuit design engineers. These doping profiles are compared based on how well they perform against non-ideal and ideal environments. Also, both digital and analog performance are measured to ensure the uniqueness of each doping profile that is present. After getting a list of benefits from each doping profile, it is derived to determine which doping profile works best against a host of parasitic effects and what type of application do these doping profiles have

Subject Areas

— Subthreshold Swing, Uniform Doping, Gaussian Doping, Delta doping, and Ultra Low Power.

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