Preprint Article Version 1 This version is not peer-reviewed

Optical Detection of Protrusive Defects on Thin-film Transistor

Version 1 : Received: 23 September 2018 / Approved: 24 September 2018 / Online: 24 September 2018 (15:02:56 CEST)

A peer-reviewed article of this Preprint also exists.

Tzu, F.-M.; Chen, J.-S.; Chou, J.-H. Optical Detection of Protrusive Defects on a Thin-Film Transistor. Crystals 2018, 8, 440. Tzu, F.-M.; Chen, J.-S.; Chou, J.-H. Optical Detection of Protrusive Defects on a Thin-Film Transistor. Crystals 2018, 8, 440.

Journal reference: Crystals 2018, 8, 440
DOI: 10.3390/cryst8120440

Abstract

Protrusive defects on the color filter of thin-film transistor (TFT) liquid crystal displays (LCDs) frequently damage the valuable photomask. An fast method using side-view illuminations associated with digital charge-couple devices (CCDs) to detect the protrusive defect in the four substrates, which are the black matrix (BM), red, green, and blue. Between the photomask and substrate, the depth of field (DOF) is normally 300 μm for the proximity-type aligner; we select the four substrates to evaluate the detectability in the task. The experiment is capable of detecting measurements of 300 μm and even lower than 100 μm can be assessed successfully. The maximum error of the measurement is within 6% among the four samples. Furthermore, the uncertainty analysis of three standard deviations is conducted. Thus, the method is cost-effective to prevent damage for valuable photomasks in the flat panel display industry.

Subject Areas

Protrusion, illumination, height, effective pixel, gray level, teaching

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