Preprint Article Version 1 This version is not peer-reviewed

Effect of Sharp Diameter Geometrical Modulation on the Magnetization Reversal of bi-Segmented FeNi Nanowires

Version 1 : Received: 14 July 2018 / Approved: 16 July 2018 / Online: 16 July 2018 (09:50:29 CEST)

A peer-reviewed article of this Preprint also exists.

Méndez, M.; Vega, V.; González, S.; Caballero-Flores, R.; García, J.; Prida, V.M. Effect of Sharp Diameter Geometrical Modulation on the Magnetization Reversal of Bi-Segmented FeNi Nanowires. Nanomaterials 2018, 8, 595. Méndez, M.; Vega, V.; González, S.; Caballero-Flores, R.; García, J.; Prida, V.M. Effect of Sharp Diameter Geometrical Modulation on the Magnetization Reversal of Bi-Segmented FeNi Nanowires. Nanomaterials 2018, 8, 595.

Journal reference: Nanomaterials 2018, 8, 595
DOI: 10.3390/nano8080595

Abstract

Controlling functional properties of matter and combine them for engineering a functional device is nowadays a common direction of scientific community. For instance, heterogeneous magnetic nanostructures can make use of different types of geometrical and compositional modulations to achieve the control of the magnetization reversal along with the nano-entities and thus enabling the fabrication of spintronic, magnetic data storage and sensing devices, among others. In this work, diameter modulated FeNi nanowires are fabricated paying special effort to obtain sharp transition regions between two segments of different diameters (from about 450 nm to 120 nm), enabling precise control over the magnetic behavior of the sample. Micromagnetic simulations performed on single bi-segmented nanowires predict a double step magnetization reversal where the wide segment magnetization switches near 200 Oe through a vortex domain wall, while at 500 Oe the magnetization of the narrow one is reversed through a corkscrew like mechanism. Finally, these results are confirmed with magneto-optic Kerr effect measurements at the transition of isolated bi-segmented nanowires. Furthermore, macroscopic vibrating sample magnetometry is used to demonstrate that the magnetic decoupling of nanowire segments is the main phenomenon occurring over the entire fabricated nanowires.

Subject Areas

anodization; atomic layer deposition; diameter modulated nanowire; micromagnetic simulation; ferromagnetic nanowire; MOKE; domain wall; magnetization reversal; Barkhausen jump

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