Preprint Article Version 1 This version is not peer-reviewed

ZnS/SiO2 Passivation Layer for High-Performance of TiO2/CuInS2 Quantum Dot Sensitized Solar Cells

Version 1 : Received: 5 July 2018 / Approved: 5 July 2018 / Online: 5 July 2018 (15:05:00 CEST)

A peer-reviewed article of this Preprint also exists.

Kim, H.-J.; Bae, J.-H.; Seo, H.; Shiratani, M.; Venkata Veera Muralee Gopi, C. ZnS/SiO2 Passivation Layer for High-Performance of TiO2/CuInS2 Quantum Dot Sensitized Solar Cells. Energies 2018, 11, 1931. Kim, H.-J.; Bae, J.-H.; Seo, H.; Shiratani, M.; Venkata Veera Muralee Gopi, C. ZnS/SiO2 Passivation Layer for High-Performance of TiO2/CuInS2 Quantum Dot Sensitized Solar Cells. Energies 2018, 11, 1931.

Journal reference: Energies 2018, 11, 1931
DOI: 10.3390/en11081931

Abstract

Suppressing the charge recombination at the interface of photoanode/electrolyte is the crucial way to enhance the photovoltaic performance of quantum dot sensitized solar cells (QDSSCs). In this scenario, ZnS/SiO2 blocking layer was deposited on TiO2/CuInS2 QDs to inhibit the charge recombination at photoanode/electrolyte interface. As a result, the TiO2/CuInS2/ZnS/SiO2 based QDSSCs delivers a power conversion efficiency (η) value of 4.63%, which is significantly higher than the 2.15% and 3.23% observed for QDSSCs with a TiO2/CuInS2 device and TiO2/CuInS2/ZnS, respectively. Electrochemical impedance spectroscopy and open circuit voltage decay analyses indicate that ZnS/SiO2 passivation layer on TiO2/CuInS2 suppress the charge recombination at the photoanode/electrolyte interface and prolongs the electron lifetime.

Subject Areas

QDSSCs; Charge recombination; ZnS/SiO2; Passivation layer;

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