Review
Version 2
Preserved in Portico This version is not peer-reviewed
Absorption of Light in Vertical III-V Semiconductor Nanowires for Solar Cell and Photodetector Applications
Version 1
: Received: 2 August 2023 / Approved: 3 August 2023 / Online: 3 August 2023 (10:30:25 CEST)
Version 2 : Received: 15 August 2023 / Approved: 16 August 2023 / Online: 17 August 2023 (07:53:02 CEST)
Version 2 : Received: 15 August 2023 / Approved: 16 August 2023 / Online: 17 August 2023 (07:53:02 CEST)
A peer-reviewed article of this Preprint also exists.
Anttu, N. Absorption of Light in Vertical III-V Semiconductor Nanowires for Solar Cell and Photodetector Applications. Crystals 2023, 13, 1292. Anttu, N. Absorption of Light in Vertical III-V Semiconductor Nanowires for Solar Cell and Photodetector Applications. Crystals 2023, 13, 1292.
Abstract
Vertical III-V semiconductor nanowires have shown promising absorption of light for solar cell and photodetector applications. The absorption properties can be tuned through the choice of III-V materials and geometry of the nanowires. Here, we review recent progress in the design of the absorption properties of both individual nanowires and nanowire arrays. Future directions for the research field are proposed.
Keywords
III-V semiconductor; nanowire; absorption; solar cell; photodetector
Subject
Physical Sciences, Applied Physics
Copyright: This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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Commenter: Nicklas Anttu
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